Projection exposure method and projection exposure apparatus for microlithography

A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask is provided. The method includes determining at least one light quiver parameter which describes a property of a light quiver, and controlling the operation of the projection expo...

Full description

Saved in:
Bibliographic Details
Main Authors Graeschus Volker, Gruner Toralf
Format Patent
LanguageEnglish
Published 30.05.2017
Subjects
ACCESSORIES THEREFOR
APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES
APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
Online AccessGet full text

Cover

More Information
Summary:A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask is provided. The method includes determining at least one light quiver parameter which describes a property of a light quiver, and controlling the operation of the projection exposure apparatus taking account of the light quiver parameter.
Bibliography:Application Number: US201414456819