Memory system and driving method thereof using at least two zone voltages

A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address....

Full description

Saved in:
Bibliographic Details
Main Authors Park Kitae, Ko Kuihan, Nam Sang-Wan, Ahn Yang-Lo
Format Patent
LanguageEnglish
Published 23.05.2017
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.
Bibliography:Application Number: US201615174183