Semiconductor device and method for fabricating the same

A semiconductor device includes a fin type active pattern extended in a first direction and disposed on a substrate. A first gate electrode and a second gate electrode are disposed on the fin type active pattern. The first gate electrode and the second gate electrode are extended in a second directi...

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Bibliographic Details
Main Authors Seo Kang-Ill, Suk Sung-Dae
Format Patent
LanguageEnglish
Published 16.05.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a fin type active pattern extended in a first direction and disposed on a substrate. A first gate electrode and a second gate electrode are disposed on the fin type active pattern. The first gate electrode and the second gate electrode are extended in a second direction crossing the first direction. A trench region is disposed in the fin type active pattern and between the first gate electrode and the second gate electrode. A source/drain region is disposed on a surface of the trench region. A source/drain contact is disposed on the source/drain region. The source/drain contact includes a first insulating layer disposed on the source/drain region and a metal oxide layer disposed on the first insulating layer.
Bibliography:Application Number: US201414583252