Source, target and mask optimization by incorporating contour based assessments and integration over process variations

Methods and systems for determining a source shape, a mask shape and a target shape for a lithography process are disclosed. One such method includes receiving source, mask and target constraints and formulating an optimization problem that is based on the source, mask and target constraints and inc...

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Bibliographic Details
Main Authors Tian Kehan, Inoue Tadanobu, Rosenbluth Alan E, Melville David O, Sakamoto Masaharu
Format Patent
LanguageEnglish
Published 16.05.2017
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Summary:Methods and systems for determining a source shape, a mask shape and a target shape for a lithography process are disclosed. One such method includes receiving source, mask and target constraints and formulating an optimization problem that is based on the source, mask and target constraints and incorporates contour-based assessments for the target shape that are based on physical design quality of a circuit. Further, the optimization problem is solved by integrating over process condition variations to simultaneously determine the source shape, the mask shape and the target shape. In addition, the determined source shape and mask shape are output.
Bibliography:Application Number: US201514985049