Methods for gate formation in circuit structures

Methods for forming a gate structure of a circuit structure are provide. The methods for forming the gate structure may include: forming a first gate pattern in a gate mask layer, the forming including a first etching of rounded corner portions of the first gate pattern; forming a second gate patter...

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Bibliographic Details
Main Authors Li Jiong, Dai Xintuo
Format Patent
LanguageEnglish
Published 02.05.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods for forming a gate structure of a circuit structure are provide. The methods for forming the gate structure may include: forming a first gate pattern in a gate mask layer, the forming including a first etching of rounded corner portions of the first gate pattern; forming a second gate pattern in the gate mask layer, the second gate pattern at least partially overlapping the first gate pattern, the forming including a second etching of rounded corner portions of the second gate pattern; and, etching the gate mask layer using the first gate pattern and second gate pattern to form the gate structure.
Bibliography:Application Number: US201615049351