Silicon carbide schottky diode
A SiC Schottky diode which includes a Schottky barrier formed on a silicon face 4H-SiC body.
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Format | Patent |
Language | English |
Published |
18.04.2017
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Subjects | |
Online Access | Get full text |
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Abstract | A SiC Schottky diode which includes a Schottky barrier formed on a silicon face 4H-SiC body. |
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AbstractList | A SiC Schottky diode which includes a Schottky barrier formed on a silicon face 4H-SiC body. |
Author | Richieri Giovanni |
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Notes | Application Number: US201313759872 |
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RelatedCompanies | Richieri Giovanni SILICONIX TECHNOLOGY C.V |
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Snippet | A SiC Schottky diode which includes a Schottky barrier formed on a silicon face 4H-SiC body. |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Silicon carbide schottky diode |
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