Silicon carbide schottky diode

A SiC Schottky diode which includes a Schottky barrier formed on a silicon face 4H-SiC body.

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Bibliographic Details
Main Author Richieri Giovanni
Format Patent
LanguageEnglish
Published 18.04.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A SiC Schottky diode which includes a Schottky barrier formed on a silicon face 4H-SiC body.
Bibliography:Application Number: US201313759872