Method of patterning features of a semiconductor device

A method of semiconductor device fabrication including forming a mandrel on a semiconductor substrate is provided. The method continues to include oxidizing a region the mandrel to form an oxidized region, wherein the oxidized region abuts a sidewall of the mandrel. The mandrel is then removed from...

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Bibliographic Details
Main Authors Shieh Ming-Feng, Huang Wen-Chun, Liu Ru-Gun, Chen Chen-Yu, Chiu Wei-Chao, Lai Chih-Ming, Cheng Nian-Fuh
Format Patent
LanguageEnglish
Published 18.04.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of semiconductor device fabrication including forming a mandrel on a semiconductor substrate is provided. The method continues to include oxidizing a region the mandrel to form an oxidized region, wherein the oxidized region abuts a sidewall of the mandrel. The mandrel is then removed from the semiconductor substrate. After removing the mandrel, the oxidized region is used to pattern an underlying layer formed on the semiconductor substrate.
Bibliography:Application Number: US201514698094