Semiconductor arrangement and formation thereof

A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a metal connect over and connected to a first active region, over and connected to a second active region and over a shallow trench isolation (STI) region thereby connecting the first active regi...

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Bibliographic Details
Main Authors Lin Chie-luan, Wang Yen-Sen, Ting Jyh-Kang, Lu Chen-Hung, Lin Ming-Yi
Format Patent
LanguageEnglish
Published 11.04.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a metal connect over and connected to a first active region, over and connected to a second active region and over a shallow trench isolation (STI) region thereby connecting the first active region to the second active region. A metal contact is over and connected to a gate in the STI region. The metal connect is formed in a first opening and the metal contact is formed in a second opening, where the first opening and the second opening are formed concurrently using a single mask. The semiconductor arrangement formed using a single mask is less expensive to fabricate and requires fewer etching operations than a semiconductor arrangement formed using multiple masks.
Bibliography:Application Number: US201615160257