Multi-gate semiconductor devices with improved hot-carrier injection immunity

• Main Authors: Zuo Jiang-Kai, Yang Hongning, Zhang Zhihong
• Format: Patent
• Language: English
• Published: 04.04.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes a substrate having a first dopant type, a first gate electrode and second gate electrode formed over the substrate and spatially separated from each other, a first region of a second dopant type, having a pocket of the first dopant type, formed in the substrate between the first and second gate electrodes, the pocket being spaced apart from the first and second gate electrodes, a silicide block over the first region, a source region formed in the substrate on an opposing side of the first gate electrode from the first region and having the second dopant type, a drain region formed in the substrate on an opposing side of the second gate electrode from the first region, the drain region having the second dopant type, and a second pocket of the first dopant type formed in the drain region adjacent to the second gate electrode.