Multi-gate semiconductor devices with improved hot-carrier injection immunity
A semiconductor device includes a substrate having a first dopant type, a first gate electrode and second gate electrode formed over the substrate and spatially separated from each other, a first region of a second dopant type, having a pocket of the first dopant type, formed in the substrate betwee...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English |
Published |
04.04.2017
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A semiconductor device includes a substrate having a first dopant type, a first gate electrode and second gate electrode formed over the substrate and spatially separated from each other, a first region of a second dopant type, having a pocket of the first dopant type, formed in the substrate between the first and second gate electrodes, the pocket being spaced apart from the first and second gate electrodes, a silicide block over the first region, a source region formed in the substrate on an opposing side of the first gate electrode from the first region and having the second dopant type, a drain region formed in the substrate on an opposing side of the second gate electrode from the first region, the drain region having the second dopant type, and a second pocket of the first dopant type formed in the drain region adjacent to the second gate electrode. |
---|---|
Bibliography: | Application Number: US201514851877 |