Dielectric structures with negative taper and methods of formation thereof

A method for forming a dielectric structure includes forming an auxiliary layer over a substrate, and forming a hole within the auxiliary layer. A fill material is deposited into the hole. The auxiliary layer is removed to form the dielectric structure having a negative taper. The dielectric structu...

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Bibliographic Details
Main Author Engelhardt Manfred
Format Patent
LanguageEnglish
Published 04.04.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming a dielectric structure includes forming an auxiliary layer over a substrate, and forming a hole within the auxiliary layer. A fill material is deposited into the hole. The auxiliary layer is removed to form the dielectric structure having a negative taper. The dielectric structure has a top critical dimension greater than a bottom critical dimension.
Bibliography:Application Number: US201514621082