Tsv wafer with improved fracture strength

A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such th...

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Bibliographic Details
Main Authors Thomas David C, Amoah Yoba, Samala Sruthi, Adkisson James W, Lifson Max L, Gambino Jeffrey P, Leggett Christine A, Musante Charles F
Format Patent
LanguageEnglish
Published 28.03.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such that a second portion of the substrate remains in direct contact surrounding a vertical sidewall of the through-substrate via, and filling the opening with an alternate material having a lower modulus of elasticity than the substrate.
Bibliography:Application Number: US201514825778