Semiconductor device having a gate all around structure
A semiconductor includes a substrate including a first region and a second region, a fin extending in a first direction in the first region of the substrate, wherein the fin includes a first semiconductor pattern and a second semiconductor pattern that are disposed on each other, a first wire patter...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
21.03.2017
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Subjects | |
Online Access | Get full text |
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