Semiconductor device having a gate all around structure

A semiconductor includes a substrate including a first region and a second region, a fin extending in a first direction in the first region of the substrate, wherein the fin includes a first semiconductor pattern and a second semiconductor pattern that are disposed on each other, a first wire patter...

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Bibliographic Details
Main Authors Seo Kang-Ill, Suk Sung-Dae
Format Patent
LanguageEnglish
Published 21.03.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor includes a substrate including a first region and a second region, a fin extending in a first direction in the first region of the substrate, wherein the fin includes a first semiconductor pattern and a second semiconductor pattern that are disposed on each other, a first wire pattern extending in a second direction in the second region of the substrate, a first gate electrode disposed on the fin, wherein the first gate electrode extends in a third direction that is different from the first direction, and a second gate electrode surrounding an outer perimeter of the first wire pattern and extending in a fourth direction that is different from the second direction.
Bibliography:Application Number: US201514961378