Non-linearity compensation in radio frequency switches and devices

Radio frequency (RF) switches and devices provide improved switching performance. An RF switch includes at least one field-effect transistor (FET) disposed between a first node and a second node, each of the at least one FET having a respective source, drain, gate, and body, and a compensation circu...

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Bibliographic Details
Main Authors Altunkilic Fikret, Cebi Haki
Format Patent
LanguageEnglish
Published 07.03.2017
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
TRANSMISSION
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Summary:Radio frequency (RF) switches and devices provide improved switching performance. An RF switch includes at least one field-effect transistor (FET) disposed between a first node and a second node, each of the at least one FET having a respective source, drain, gate, and body, and a compensation circuit connected to the respective drain of the at least one FET that compensates a non-linearity effect generated by the at least one FET.
Bibliography:Application Number: US201615019233