Non-linearity compensation in radio frequency switches and devices
Radio frequency (RF) switches and devices provide improved switching performance. An RF switch includes at least one field-effect transistor (FET) disposed between a first node and a second node, each of the at least one FET having a respective source, drain, gate, and body, and a compensation circu...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
07.03.2017
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Subjects | |
Online Access | Get full text |
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Summary: | Radio frequency (RF) switches and devices provide improved switching performance. An RF switch includes at least one field-effect transistor (FET) disposed between a first node and a second node, each of the at least one FET having a respective source, drain, gate, and body, and a compensation circuit connected to the respective drain of the at least one FET that compensates a non-linearity effect generated by the at least one FET. |
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Bibliography: | Application Number: US201615019233 |