Mechanisms for forming radio frequency (RF) area of integrated circuit structure

A method for forming a radio frequency area of an integrated circuit are provided. The method includes forming a buried oxide layer over a substrate, and an interface layer is formed between the substrate and the buried oxide layer. The method also includes etching through the buried oxide layer and...

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Main Authors Chen Keng-Yu, Chen Chun-Hung, Tsai Wei-Kung, Yang Tsung-Yu, Chao Chih-Ping, Chang Chung-Long, Cheng Kuo-Yu, Tsai Kuan-Chi
Format Patent
LanguageEnglish
Published 07.03.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming a radio frequency area of an integrated circuit are provided. The method includes forming a buried oxide layer over a substrate, and an interface layer is formed between the substrate and the buried oxide layer. The method also includes etching through the buried oxide layer and the interface layer to form a deep trench, and a bottom surface of the deep trench is level with a bottom surface of the interface layer. The method further includes forming an implant region directly below the deep trench and forming an interlayer dielectric layer in the deep trench.
Bibliography:Application Number: US201514971031