Graphene-inserted phase change memory device and method of fabricating the same

• Main Authors: Kim Yongsung, Sood Aditya, Pop Eric, Wong H.-S. Philip, Asheghi Mehdi, Ahn Chiyui, Goodson Kenneth E, Fong Scott, Lee Seunghyun, Neumann Christopher M
• Format: Patent
• Language: English
• Published: 28.02.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided is a phase change memory device including a graphene layer inserted between a lower electrode into which heat flows and a phase change material layer, to prevent the heat from being diffused to an outside so as to efficiently transfer the heat to the phase change material layer, and a method of fabricating the phase change memory device. The phase change memory device includes a lower electrode; an insulating layer formed to enclose the lower electrode; a graphene layer formed on the lower electrode; a phase change material layer formed on the graphene layer and the insulating layer; and an upper electrode formed on the phase change material layer. Since a phase of the phase change material layer is changed at a small amount of driving current, the phase change memory device is fabricated to have a high driving speed and a high integration.