Self-aligned source/drain contacts

• Main Authors: Alptekin Emre, Cheng Kangguo, Ponoth Shom S, Adusumilli Praneet, Pranatharthiharan Balasubramanian
• Format: Patent
• Language: English
• Published: 21.02.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor substrate includes lower source/drain (S/D) regions. A replacement metal gate (RMG) structure is arranged upon the semiconductor substrate between the lower S/D regions. Raised S/D regions are arranged upon the lower S/D regions adjacent to the RMG structure, respectively. The raised S/D regions may be recessed to form contact trenches. First self-aligned contacts are located upon the raised S/D regions within a first active area and second self-aligned contacts are located upon the recessed raised S/D regions in the second active area. The first and second self-aligned contacts allows for independent reduction of source drain contact resistances. The first self-aligned contacts may be MIS contacts or metal silicide contacts and the second self-aligned contacts may be metal-silicide contacts.