Method and processing apparatus for fabricating a magnetic resistive random access memory device

Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a ferromagnetic layer, cooling the ferromagnetic layer to a temperature within a range of between about 50° K to about 300° K, forming and oxidizing on...

Full description

Saved in:
Bibliographic Details
Main Authors Kim Sangyong, Jang Youngman, Park Yongsung, Oh Sechung, Kim Kiwoong
Format Patent
LanguageEnglish
Published 14.02.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a ferromagnetic layer, cooling the ferromagnetic layer to a temperature within a range of between about 50° K to about 300° K, forming and oxidizing one or more Mg layers on the cooled ferromagnetic layer to form an MgO structure, forming a free layer on the MgO structure, and forming a capping layer on the free layer.
Bibliography:Application Number: US201514794796