Method and apparatus for depositing atomic layers on a substrate

Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises m...

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Bibliographic Details
Main Authors Van Der Donck Jacques Cor Johan, Van Den Boer Matijs C, Van Den Berg Dennis, Olieslagers Ruud, Maas Diederik Jan, Knaapen Raymond Jacobus Wilhelmus, Roozeboom Freddy
Format Patent
LanguageEnglish
Published 14.02.2017
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Summary:Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. The method further comprises switching between supplying the precursor gas from the precursor-gas supply towards the substrate over a first part of the rotation trajectory; and interrupting supplying the precursor gas from the precursor-gas supply over a second part of the rotation trajectory.
Bibliography:Application Number: US201214237577