Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures

Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.

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Bibliographic Details
Main Authors Cheng Zhiyuan, Sheen Calvin
Format Patent
LanguageEnglish
Published 31.01.2017
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
CALCULATING
CODE CONVERSION IN GENERAL
CODING
COMPUTING
COUNTING
DECODING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
PHYSICS
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
STATIC STORES
TRANSPORTING
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Summary:Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
Bibliography:Application Number: US201514793476