Method for manufacturing a semiconductor structure and semiconductor component comprising such a semiconductor structure

A method for manufacturing at least one semiconductor structure, and a component including a structure formed with the method, the method including: providing a substrate including at least one semiconductor silicon surface; forming an amorphous silicon carbide layer in contact with at least one par...

Full description

Saved in:
Bibliographic Details
Main Authors Amstatt Benoit, Daudin Bruno-Jules
Format Patent
LanguageEnglish
Published 31.01.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method for manufacturing at least one semiconductor structure, and a component including a structure formed with the method, the method including: providing a substrate including at least one semiconductor silicon surface; forming an amorphous silicon carbide layer in contact with at least one part of the semiconductor silicon surface; forming the at least one semiconductor structure in contact with the silicon carbide layer, the structure including at least one part, as a contact part, in contact with the surface of the silicon carbide layer, which includes gallium.
Bibliography:Application Number: US201414898684