Method for processing a carrier, a method for operating a plasma processing chamber, and a method for processing a semiconductor wafer
According to various embodiments, a method for processing a carrier may include: performing a dry etch process in a processing chamber to remove a first material from the carrier by an etchant, the processing chamber including an exposed inner surface including aluminum and the etchant including a h...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
10.01.2017
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Subjects | |
Online Access | Get full text |
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Summary: | According to various embodiments, a method for processing a carrier may include: performing a dry etch process in a processing chamber to remove a first material from the carrier by an etchant, the processing chamber including an exposed inner surface including aluminum and the etchant including a halogen; and, subsequently, performing a hydrogen plasma process in the processing chamber to remove a second material from at least one of the carrier or the inner surface of the processing chamber. |
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Bibliography: | Application Number: US201414501055 |