DC insulation semiconductor relay device

A semiconductor relay device (1) includes a signal input unit (2) for inputting an alternating current signal for relay driving purpose, a direct current insulation member (3) for blocking a direct current electricity of the alternating current signal, a voltage multiplying circuit (5) for multiplyi...

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Bibliographic Details
Main Author Murata Yasuhito
Format Patent
LanguageEnglish
Published 03.01.2017
Subjects
ALARM SYSTEMS
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
COLORIMETRY
ELECTRIC SWITCHES
ELECTRICITY
EMERGENCY PROTECTIVE DEVICES
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
ORDER TELEGRAPHS
PHYSICS
PULSE TECHNIQUE
RADIATION PYROMETRY
RELAYS
SELECTORS
SIGNALLING
SIGNALLING OR CALLING SYSTEMS
TESTING
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Summary:A semiconductor relay device (1) includes a signal input unit (2) for inputting an alternating current signal for relay driving purpose, a direct current insulation member (3) for blocking a direct current electricity of the alternating current signal, a voltage multiplying circuit (5) for multiplying the signal voltage, after the direct current electricity has been blocked, by an integer number, and a relay circuit (4) including two metal-oxide semiconductor field-effect transistors (6, 7) having respective sources connected with each other and connected in a reverse series with each other and also having respective gates connected with each other. Those metal-oxide semiconductor field-effect transistors (6, 7) are caused to undergo a bidirectional ON-Off operation when the respective gates of those metal-oxide semiconductor field-effect transistors (6, 7) are brought into a conducting state by a signal of which voltage has been multiplied by the voltage multiplying circuit (5).
Bibliography:Application Number: US201214118786