Semiconductor chip including integrated circuit having cross-coupled transistor configuration and method for manufacturing the same

A first conductive structure forms gate electrodes of a first transistor of a first transistor type and a first transistor of a second transistor type. A second conductive structure forms a gate electrode of a second transistor of the first transistor type. A third conductive structure forms a gate...

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Bibliographic Details
Main Authors Lambert Carole, Becker Scott T, Mali Jim
Format Patent
LanguageEnglish
Published 03.01.2017
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A first conductive structure forms gate electrodes of a first transistor of a first transistor type and a first transistor of a second transistor type. A second conductive structure forms a gate electrode of a second transistor of the first transistor type. A third conductive structure forms a gate electrode of a second transistor of the second transistor type. A fourth conductive structure forms a gate electrode of a third transistor of the first transistor type. A fifth conductive structure forms a gate electrode of a third transistor of the second transistor type. A sixth conductive structure forms gate electrodes of a fourth transistor of the first transistor type and a fourth transistor of the second transistor type. The second and third transistors of the first transistor type and the second and third transistors of the second transistor type are electrically connected to form a cross-coupled transistor configuration.
Bibliography:Application Number: US201514945361