Fin structure and method of forming the same

A fin structure and a method of forming the same, where the fin structure includes a fin and a protrusion having irregular shape. The fin and the protrusion are both formed on a substrate, and the protrusion has a height less than that of the fin. With such arrangement, the fin structure of the pres...

Full description

Saved in:
Bibliographic Details
Main Authors Liu An-Chi, Huang Nan-Yuan
Format Patent
LanguageEnglish
Published 27.12.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A fin structure and a method of forming the same, where the fin structure includes a fin and a protrusion having irregular shape. The fin and the protrusion are both formed on a substrate, and the protrusion has a height less than that of the fin. With such arrangement, the fin structure of the present invention, as well as the method of forming the same, can achieve the purpose of keeping the fin from collapsing and over etching.
Bibliography:Application Number: US201414506682