Semiconductor integrated circuit device with reduced leakage current

The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrate...

Full description

Saved in:
Bibliographic Details
Main Authors Saitoh Yoshikazu, Kitai Naoki, Ishibashi Koichiro, Nakamichi Masaru, Nishida Akio, Osada Kenichi
Format Patent
LanguageEnglish
Published 27.12.2016
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.
Bibliography:Application Number: US201514826911