Structures and methods for determining TDDB reliability at reduced spacings using the structures

A structure for TDDB measurement, a method determining TDDB at reduced spacings. The structure includes an upper dielectric layer on a top surface of a lower dielectric layer, a bottom surface of the upper dielectric layer and the top surface of the lower dielectric layer defining an interface; a fi...

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Bibliographic Details
Main Authors Filippi Ronald G, Kaltalioglu Erdem, Wang Ping-Chuan, Lustig Naftali E, Zhang Lijuan
Format Patent
LanguageEnglish
Published 20.12.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:A structure for TDDB measurement, a method determining TDDB at reduced spacings. The structure includes an upper dielectric layer on a top surface of a lower dielectric layer, a bottom surface of the upper dielectric layer and the top surface of the lower dielectric layer defining an interface; a first wire formed in the lower dielectric layer; a second wire formed in the upper dielectric layer; and wherein a distance between the first wire and the second wire measured in a direction parallel to the interface is below the lithographic resolution limit of the fabrication technology.
Bibliography:Application Number: US201213664903