High density microwave plasma generation apparatus, and magnetron sputtering deposition system using the same

• Main Authors: Toyoda Hirotaka, Sasai Kensuke
• Format: Patent
• Language: English
• Published: 29.11.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A microwave plasma generation apparatus (4) includes: a rectangular waveguide (41) that transmits a microwave; a slot antenna (42) that has a slot (420) through which the microwave passes; and a dielectric portion (43) that is arranged so as to cover the slot (420) and of which a plasma generating region-side front face is parallel to an incident direction in which the microwave enters from the slot (420). The microwave plasma generation apparatus (4) is able to generate microwave plasma (P1) under a low pressure of lower than or equal to 1 Pa. A magnetron sputtering deposition system (1) includes the microwave plasma generation apparatus (4), and carries out film deposition using magnetron plasma (P2) while radiating microwave plasma (P1) between a base material (20) and a target (30). With the magnetron sputtering deposition system (1), it is possible to form a thin film having small asperities on its surface.