Nanowire semiconductor device including lateral-etch barrier region

• Main Authors: Yamashita Tenko, Basker Veeraraghavan S, Liu Zuoguang, Yeh Chun-Chen
• Format: Patent
• Language: English
• Published: 22.11.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes a semiconductor-on-insulator wafer having a buried oxide layer. The buried oxide layer includes therein opposing etch barrier regions and a gate region between the etch barrier regions. The semiconductor device further includes at least one nanowire having a channel p...