Alignment mark formation method and semiconductor device

According to one embodiment, at first, a first pattern is formed to an insulating film. Then, a first transparent film is formed on a region of the insulating film, which includes a position where the first pattern is formed. Thereafter, an opaque film which is opaque to light within a visible light...

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Bibliographic Details
Main Author Hagio Yoshinori
Format Patent
LanguageEnglish
Published 22.11.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to one embodiment, at first, a first pattern is formed to an insulating film. Then, a first transparent film is formed on a region of the insulating film, which includes a position where the first pattern is formed. Thereafter, an opaque film which is opaque to light within a visible light region is formed on an entire surface of the insulating film. Then, a second transparent film is generated by selectively oxidizing part of the opaque film in contact with the first transparent film.
Bibliography:Application Number: US201514799787