Semiconductor device and manufacturing method thereof

The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent ba...

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Bibliographic Details
Main Authors Oshima Takayuki, Miura Noriko, Ishikawa Kensuke, Saito Tatsuyuki, Noguchi Junji, Katsuyama Kiyomi, Iwasaki Tomio, Tamaru Tsuyoshi, Yamaguchi Hizuru
Format Patent
LanguageEnglish
Published 08.11.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
Bibliography:Application Number: US201514702507