Memory device for realizing sector erase function and operating method thereof

A memory device comprises a plurality of sectors and a driving circuit comprising a global word line driver and a first local word line driver. The global word line driver applies an erasing voltage to a selected sector of the sectors via a global word line. The first local word line driver, coupled...

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Bibliographic Details
Main Authors Wu Cai-Yun, Kuo Nai-Ping
Format Patent
LanguageEnglish
Published 08.11.2016
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A memory device comprises a plurality of sectors and a driving circuit comprising a global word line driver and a first local word line driver. The global word line driver applies an erasing voltage to a selected sector of the sectors via a global word line. The first local word line driver, coupled to the global word line, drives a first local word line of the selected sector with a biasing voltage, so that the first local word line has a first voltage level corresponding to a non-erased state.
Bibliography:Application Number: US201414494687