Microfluidic impingement jet cooled embedded diamond GaN HEMT

A MMIC power amplifier circuit assembly comprised of a SiC substrate having a plurality of microchannels formed therein, where a diamond layer is provided within each of the microchannels. A plurality of GaN HEMT devices are provided on the substrate where each HEMT device is positioned directly opp...

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Bibliographic Details
Main Authors Mandrusiak Gary D, Gambin Vincent, Poust Benjamin D, Ferizovic Dino, Weaver Stanton E
Format Patent
LanguageEnglish
Published 01.11.2016
Subjects
AMPLIFIERS
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A MMIC power amplifier circuit assembly comprised of a SiC substrate having a plurality of microchannels formed therein, where a diamond layer is provided within each of the microchannels. A plurality of GaN HEMT devices are provided on the substrate where each HEMT device is positioned directly opposite to a microchannel. A silicon manifold is coupled to the substrate and includes a plurality of micro-machined channels formed therein that include a jet impingement channel positioned directly adjacent each microchannel, a return channel directly positioned adjacent to each microchannel, a supply channel supplying a cooling fluid to the impingement channels and a return channel collecting heated cooling fluid from the supply channels so that an impingement jet is directed on to the diamond layer for removing heat generated by the HEMT devices.
Bibliography:Application Number: US201615072242