Dynamic compensation in advanced process control

• Main Authors: Sung Jin-Ning, Lu Shin-Rung, Mou Jong-I, Hsu Chih-Wei
• Format: Patent
• Language: English
• Published: 25.10.2016
• Subjects: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; CONTROL OR REGULATING SYSTEMS IN GENERAL; CONTROLLING; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS; PHYSICS; REGULATING; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

A method of semiconductor fabrication is provided. The method includes providing a model for a device parameter of a wafer as a function of first and second process parameters. The first and second process parameters correspond to different wafer characteristics, respectively. The method includes deriving target values of the first and second process parameters based on a specified target value of the device parameter. The method includes performing a first fabrication process in response to the target value of the first process parameter. The method includes measuring an actual value of the first process parameter thereafter. The method includes updating the model using the actual value of the first process parameter. The method includes deriving a revised target value of the second process parameter using the updated model. The method includes performing a second fabrication process in response to the revised target value of the second process parameter.