Structure and method to determine through silicon via build integrity

A structure to detect changes in the integrity of vertical electrical connection structures including a semiconductor layer and an electrically conductive material extending through an entire depth of the semiconductor layer. The electrically conductive material has a geometry that encloses a pedest...

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Bibliographic Details
Main Authors Murray Conal E, Graves-Abe Troy L, Kothandaraman Chandrasekharan
Format Patent
LanguageEnglish
Published 25.10.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
TESTING STATIC OR DYNAMIC BALANCE OF MACHINES ORSTRUCTURES
TESTING STRUCTURES OR APPARATUS NOT OTHERWISE PROVIDED FOR
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Summary:A structure to detect changes in the integrity of vertical electrical connection structures including a semiconductor layer and an electrically conductive material extending through an entire depth of the semiconductor layer. The electrically conductive material has a geometry that encloses a pedestal portion of the semiconductor layer within an interior perimeter of the electrically conductive material. At least one semiconductor device is present on the pedestal portion of the semiconductor layer within the perimeter of the electrically conductive material.
Bibliography:Application Number: US201414161309