High-brightness LPP EUV light source

The invention provides a method and apparatus for a commercially viable EUV light source for EUV metrology and actinic inspection of EUV lithography masks. The invention is carried out using a laser target in the form of a continuous jet of liquid Lithium, circulated in a closed loop system by means...

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Main Authors Ivanov Vladimir Vitalievich, Kryvokorytov Mikhail Sergeyevich, Yakushev Oleg Feliksovich, Koshelev Konstantin Nikolaevich, Vinokhodov Aleksandr Yurievich, Medvedev Vyacheslav Valerievich, Seroglazov Pavel Viktorovich, Antsiferov Pavel Stanislavovich, Glushkov Denis Alexandrovich, Ellwi Samir, Krivtsun Vladimir Mikhailovich, Lash Aleksandr Andreevich, Sidelnikov Yury Viktorovich
Format Patent
LanguageEnglish
Published 25.10.2016
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Summary:The invention provides a method and apparatus for a commercially viable EUV light source for EUV metrology and actinic inspection of EUV lithography masks. The invention is carried out using a laser target in the form of a continuous jet of liquid Lithium, circulated in a closed loop system by means of a high temperature pump. The collector mirror is placed outside the vacuum chamber in an environment filled with an inert gas and EUV output to a collector mirror is provided through the spectral purity filter, configured as an EUV exit window for the vacuum chamber. In the vacuum chamber, the input window for the laser beam is coated with a screening optical element. Evaporative cleaning of the EUV spectral purity filter and the screening optical element is provided. The protective shield with a temperature higher than 180° C. may be adjusted around the target jet.
Bibliography:Application Number: US201615181509