Memory structrue and operation method thereof

This invention provides a memory structure and an operation method thereof. The memory structure includes a triode for alternating current (TRIAC) and a memory cell. The memory cell is electrically connected to the TRIAC.

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Bibliographic Details
Main Authors Chen Chun-Cheng, Hwang Hann-Ping, Huang Tzung-Bin, Lin Chan-Ching, Huang Chen-Hao
Format Patent
LanguageEnglish
Published 04.10.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:This invention provides a memory structure and an operation method thereof. The memory structure includes a triode for alternating current (TRIAC) and a memory cell. The memory cell is electrically connected to the TRIAC.
Bibliography:Application Number: US201414316806