Semiconductor device and manufacturing method for the same

A semiconductor device includes: a first GaN based semiconductor layer (hereinafter abbreviated as GaN layer); a second GaN layer on the first GaN layer and having a bandgap larger than that of the first GaN layer; a source electrode on the second GaN layer; a drain electrode on the second GaN layer...

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Bibliographic Details
Main Authors Kuraguchi Masahiko, Saito Hisashi
Format Patent
LanguageEnglish
Published 04.10.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes: a first GaN based semiconductor layer (hereinafter abbreviated as GaN layer); a second GaN layer on the first GaN layer and having a bandgap larger than that of the first GaN layer; a source electrode on the second GaN layer; a drain electrode on the second GaN layer; a gate electrode between the source electrode and the drain electrode, a gate insulating film between the gate electrode and the first GaN layer, a film thickness of the second GaN layer between the gate electrode and the first GaN layer being thinner than that of the second GaN layer between the source electrode and the first GaN layer; and a p-type third GaN layer between the second GaN layer and an end portion on the drain electrode side of the gate electrode, the gate insulating film between the gate electrode and the third GaN layer.
Bibliography:Application Number: US201514642146