Semiconductor device and method for making the device

Disclosed herein is a semiconductor device including: a first substrate provided with a first surface layer including a first electrode; an expanded second substrate provided with a second surface layer including a second electrode and directly bonded to the first substrate so that the second surfac...

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Bibliographic Details
Main Author Miyajima Hiroki
Format Patent
LanguageEnglish
Published 04.10.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed herein is a semiconductor device including: a first substrate provided with a first surface layer including a first electrode; an expanded second substrate provided with a second surface layer including a second electrode and directly bonded to the first substrate so that the second surface layer contacts with the first surface layer; and a through electrode running through the first or second substrate. The second surface layer is provided over an expanded second principal surface defined by a second substrate and a resin portion. The second substrate has a smaller planar size than the first substrate. The first and second electrodes are connected together and in contact with each other.
Bibliography:Application Number: US201514948128