10 nm alternative N/P doped fin for SSRW scheme

• Main Authors: Liu Jinping, Bouche Guillaume, Liu Huang, Cao Huy M
• Format: Patent
• Language: English
• Published: 27.09.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of introducing N/P dopants in PMOS and NMOS fins at the SSRW layer without complicated processing and the resulting device are provided. Embodiments include forming a plurality of p-type and n-type fins on a substrate, the plurality of p-type and n-type fins formed with an ISSG or pad oxide layer; performing an n-well implant into the substrate through the ISSG or pad oxide layer; performing a first SRPD on the ISSG or pad oxide layer of the plurality of p-type fins; performing a p-well implant into the substrate through the ISSG or pad oxide layer; performing a second SRPD on the ISSG or pad oxide layer of the plurality of n-type fins; and driving the n-well and p-well implants and the SRPD dopants into a portion of the plurality of p-type and n-type fins.