Thin film transistor of display apparatus

Disclosed is a thin film transistor (TFT) of a display apparatus which reduces a leakage current caused by a hump and decreases screen defects. The TFT includes an active layer and a first gate electrode with a gate insulator therebetween, and a source electrode and a drain electrode respectively di...

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Bibliographic Details
Main Authors Choi Jin Ho, Park Choon Ho, Kim Soo Hong, Ham Eun Ji, Kim Kuk Hwan, Cho Ki Sul, Han Sang Kug, Song Byoung Cheol
Format Patent
LanguageEnglish
Published 20.09.2016
Subjects
ADVERTISING
ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICESUSING STATIC MEANS TO PRESENT VARIABLE INFORMATION
BASIC ELECTRIC ELEMENTS
CRYPTOGRAPHY
DISPLAY
EDUCATION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEALS
SEMICONDUCTOR DEVICES
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Summary:Disclosed is a thin film transistor (TFT) of a display apparatus which reduces a leakage current caused by a hump and decreases screen defects. The TFT includes an active layer and a first gate electrode with a gate insulator therebetween, and a source electrode and a drain electrode respectively disposed at both ends of the active layer. The gate electrode branches as a plurality of lines and overlaps the active layer. The active layer includes one or more channel areas between the source electrode and the drain electrode, one or more dummy areas, and a plurality of link areas between the one or more channel areas to connect the one or more channel areas in one pattern. A length of each of the one or more dummy areas extends from an edge of a corresponding channel area.
Bibliography:Application Number: US201514750217