Shallow trench isolation structure having a nitride plug

A semiconductor structure and method for forming a shallow trench isolation (STI) structure having one or more oxide layers and a nitride plug. Specifically, the structure and method involves forming one or more trenches in a substrate. The STI structure is formed having one or more oxide layers and...

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Bibliographic Details
Main Authors Kim Byeong Y, Narasimha Shreesh
Format Patent
LanguageEnglish
Published 13.09.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure and method for forming a shallow trench isolation (STI) structure having one or more oxide layers and a nitride plug. Specifically, the structure and method involves forming one or more trenches in a substrate. The STI structure is formed having one or more oxide layers and a nitride plug, wherein the STI structure is formed on and adjacent to at least one of the one or more trenches. One or more gates are formed on the substrate and spaced at a distance from each other. A dielectric layer is formed on and adjacent to the substrate, the STI structure, and the one or more gates.
Bibliography:Application Number: US201414532230