Method and structure for transistors using gate stack dopants with minimal nitrogen penetration
Embodiments of the present invention provide CMOS structures and methods of gate formation that combine a keep-cap scheme in which a protective layer is maintained on a PFET during a replacement metal gate process that utilizes an NFET-first process flow. Selective nitridation is used to provide nit...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
16.08.2016
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Subjects | |
Online Access | Get full text |
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Summary: | Embodiments of the present invention provide CMOS structures and methods of gate formation that combine a keep-cap scheme in which a protective layer is maintained on a PFET during a replacement metal gate process that utilizes an NFET-first process flow. Selective nitridation is used to provide nitrogen to the NFET while the PFET is protected from nitrogen by the keep-cap. Additional dopants are provided to the NFET using a gate stack dopant material (GSDM) layer. |
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Bibliography: | Application Number: US201414513725 |