Semiconductor device and a method of manufacturing the same

A method of manufacturing a semiconductor device having a non-volatile memory cell includes forming first insulating films with first conductive films arranged therebetween, recessing the first insulating films using the first conductive films as a mask, so that heights of top surfaces of the first...

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Bibliographic Details
Main Authors Ikeda Yoshihiro, Fukumura Tatsuya, Narumi Shunichi, Takesue Izumi
Format Patent
LanguageEnglish
Published 09.08.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A method of manufacturing a semiconductor device having a non-volatile memory cell includes forming first insulating films with first conductive films arranged therebetween, recessing the first insulating films using the first conductive films as a mask, so that heights of top surfaces of the first insulating films are lower than heights of top surfaces of the first conductive films, forming a second insulating film over the first conductive and insulating films, forming a second conductive film over the second insulating film, and patterning the first and second conductive films, and the second insulating film. A length of the floating gate in a second direction is larger than a maximum length of the floating gate in a first direction, and a length from a top surface of the second insulating film to a top surface of the floating gate is larger than a length of a space between a plurality the floating gates.
Bibliography:Application Number: US201414547331