Fin-FET

A Fin-FET and a method of forming the Fin-FET are provided. A substrate is provided, and then a mask layer is formed thereabove. A first trench is formed in the substrate and the mask layer. A semiconductor layer is formed in the first trench. Next, the mask layer is removed such that the semi-condu...

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Bibliographic Details
Main Authors Dai Sheng-Huei, Tsai Chen-Hua, Huang Rai-Min, Lin Chun-Hsien
Format Patent
LanguageEnglish
Published 02.08.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A Fin-FET and a method of forming the Fin-FET are provided. A substrate is provided, and then a mask layer is formed thereabove. A first trench is formed in the substrate and the mask layer. A semiconductor layer is formed in the first trench. Next, the mask layer is removed such that the semi-conductive layer becomes a fin structure embedded in the substrate and protruded above the substrate. Finally, a gate layer is formed on the fin structure.
Bibliography:Application Number: US201514749648