Semiconductor device having diffusion barrier to reduce back channel leakage

A semiconductor-on-insulator (SOI) substrate comprises a bulk semiconductor substrate, a buried insulator layer formed on the bulk substrate and an active semiconductor layer formed on the buried insulator layer. Impurities are implanted near the interface of the buried insulator layer and the activ...

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Bibliographic Details
Main Authors Freeman Gregory G, Pei Chengwen, Lee Kam Leung, Zhang Yanli, Wang Geng
Format Patent
LanguageEnglish
Published 02.08.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor-on-insulator (SOI) substrate comprises a bulk semiconductor substrate, a buried insulator layer formed on the bulk substrate and an active semiconductor layer formed on the buried insulator layer. Impurities are implanted near the interface of the buried insulator layer and the active semiconductor layer. A diffusion barrier layer is formed between the impurities and an upper surface of the active semiconductor layer. The diffusion barrier layer prevents the impurities from diffusing therethrough.
Bibliography:Application Number: US201414519493