Mask error compensation by optical modeling calibration

Methodologies and an apparatus for enabling OPC models to account for errors in the mask are disclosed. Embodiments include: determining a patterning layer of a circuit design; estimating a penetration ratio indicating a mask corner rounding error of a fabricated mask for forming the patterning laye...

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Bibliographic Details
Main Authors NING GUOXIANG, ACKMANN PAUL, LIM CHIN TEONG
Format Patent
LanguageEnglish
Published 05.07.2016
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Summary:Methodologies and an apparatus for enabling OPC models to account for errors in the mask are disclosed. Embodiments include: determining a patterning layer of a circuit design; estimating a penetration ratio indicating a mask corner rounding error of a fabricated mask for forming the patterning layer in a fabricated circuit; and determining, by a processor, a compensation metric for optical proximity correction of the circuit design based on the penetration ratio.
Bibliography:Application Number: US201414263340