Mask error compensation by optical modeling calibration
Methodologies and an apparatus for enabling OPC models to account for errors in the mask are disclosed. Embodiments include: determining a patterning layer of a circuit design; estimating a penetration ratio indicating a mask corner rounding error of a fabricated mask for forming the patterning laye...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
05.07.2016
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Subjects | |
Online Access | Get full text |
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Summary: | Methodologies and an apparatus for enabling OPC models to account for errors in the mask are disclosed. Embodiments include: determining a patterning layer of a circuit design; estimating a penetration ratio indicating a mask corner rounding error of a fabricated mask for forming the patterning layer in a fabricated circuit; and determining, by a processor, a compensation metric for optical proximity correction of the circuit design based on the penetration ratio. |
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Bibliography: | Application Number: US201414263340 |