Semiconductor arrangement comprising transmission line surrounded by magnetic layer
A semiconductor arrangement is provided. The semiconductor arrangement includes a first dielectric layer surrounding a first transmission line and a magnetic layer surrounding the first dielectric layer. The magnetic layer increases the inductance of the transmission line. The semiconductor arrangem...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
28.06.2016
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor arrangement is provided. The semiconductor arrangement includes a first dielectric layer surrounding a first transmission line and a magnetic layer surrounding the first dielectric layer. The magnetic layer increases the inductance of the transmission line. The semiconductor arrangement having the magnetic layer surrounding the first transmission line has increased impedance, which promotes current flow through the transmission line, without having increased resistance as compared to a semiconductor arrangement that does not have a magnetic layer. Increased resistance requires increased power, which results in a shorter semiconductor arrangement life span than the semiconductor arrangement without the increased resistance. |
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Bibliography: | Application Number: US201414261473 |